Controller for power device and drive controller for motor

ABSTRACT

A controller for power devices which is not required to individually insulate high and low potential portions and to include an insulated power supply is disclosed. An external controller (6) is connected to a second internal control circuit (4) which is in turn connected to a level shift circuit (5) and a gate electrode of a transistor (Q2). Power supply voltage (V1) is applied to the second internal control circuit (4) for operation thereof. The level shift circuit (5) is connected to a first internal control circuit (3) which is in turn connected to a gate electrode of a transistor (Q1) and a charge pump circuit (7). Control of a first semiconductor circuit is made through the level shift means in response to an input signal generated on the basis of a second main power supply potential, thereby achieving increased responsiveness of the power devices to a control signal and improved integration.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a controller for power devices and,more particularly, to a controller for power devices employinghigh-breakdown-voltage semiconductor elements.

2. Description of the Background Art

FIG. 26 is a circuit diagram of a drive circuit for an AC inputthree-phase motor which is an example of background art controllers forpower devices employing high-breakdown-voltage semiconductor elements.As shown in FIG. 26, an AC three-phase power supply APW serving as apower supply for an AC input three-phase motor M is connected to aconverter circuit CC1 between lines P and N, and the respective phasesof the AC input three-phase motor M are connected to inverter circuitsI1, I2, I3 for controlling the phases, respectively.

The inverter circuit I1 (I2, I3) includes a pair of transistors Q1 andQ2 (Q3 and Q4; Q5 and Q6) which are power devices, such as IGBTs(insulated gate bipolar transistors), totem-pole connected between thelines P and N, and a control block SB1 (SB2, SB3). Inputs of therespective phases of the motor M are connected to connection points U,V, W of the totem-pole connected transistors, respectively.Free-wheeling diodes D1 to D6 are connected in inverse-parallel with thetransistors Q1 to Q6, respectively. Between the lines P and N areconnected a smoothing capacitor C and a brake circuit BK for use inapplying electrical brakes to the AC input three-phase motor M andincluding a diode D7 and a transistor Q7 connected in series. A brakeresistor BR exteriorly attached is connected in parallel with the diodeD7 in the brake circuit BK. A control block SB4 is connected to the gateelectrode of the transistor Q7 The control blocks SB1, SB2, SB3 formingthe inverter circuits I1, I2, I3 and the control block SB4 are connectedto an external controller 6 employing a microcomputer and the like. A DCpower supply DPW for operating the control blocks SB1, SB2, SB3 is apower supply receiving a single-phase output from the AC three-phasepower supply APW. The single-phase output from the AC three-phase powersupply APW is connected to primary coils of an isolation transformer TRthrough a converter circuit CC2. Two DC outputs from secondary coils ofthe isolation transformer TR are applied to the control blocks SB1, SB2,SB3 through converter circuits. For instance, DC outputs X and Y areapplied to the inverter circuit I1.

The arrangement of the control block SB1 of the inverter circuit I1 isshown in FIG. 27. Referring to FIG. 27, control circuits LS1 and LS2employing LVICs (low-voltage ICs) are connected to the gate electrodesof the transistors Q1 and Q2, respectively. Insulation circuits Z1 andZ2 are connected to the control circuits LS1 and LS2, respectively.Reference potentials G1 and G2 for the control circuits LS1 and LS2 arebased on different potentials.

Operation will be discussed with reference to FIGS. 26 and 27. Referringto FIG. 26, the converter circuit CC1 converts a 400 V AC input voltageto a voltage of about 600 V DC which is applied between the lines; P andN. Then the smoothing capacitor C between the lines P and N is charged,and ripple on the power supply line is suppressed. The voltage of about600 V DC is provided as main power supplies for the inverter circuitsI1, I2, I3.

Referring to FIG. 27, since the connection point U serving as an outputof the inverter circuit I1 is provided between the totem-pole connectedtransistors Q1 and Q2, the reference potential G1 for the controlcircuit LS1 is, for example, the 600 V main power supply voltage whenthe transistor Q1 is ON. In such a construction, a voltage as high as600 V is applied to the control circuit LS1 if the reference potentialG1 for the control circuit LS1 is a ground potential of 0 V.

The LVIC forming the control circuit LS1 normally has an operatingvoltage of not more than 30 V and is not constructed to withstand thevoltage as high as 600 V. Hence, the control circuit LS1 is designedsuch that the reference potential G1 for the control circuit LS1 is heldfloating from the ground potential and the main power supply voltage of600 V becomes the reference potential G1 when the transistor Q1 is ON. Aportion in which the main power supply potential is the referencepotential is referred to hereinafter as a high potential portion, and aportion in which the ground potential is the reference potential, suchas the control circuit LS2, as a low potential portion. It should benoted that the control circuit LS2 in the low potential portion is heldfloating in the same manner as the control circuit LS1.

To that end, the DC power supplies X and Y insulated through theisolation transformer TR and then rectified by the converter circuit areapplied to the control circuits LS1 and LS2 for driving thereof.Further, a control signal from the external controller 6 is applied tothe control circuits LS1 and LS2 through the insulation circuits Z1 andZ2 including insulating means such as photocouplers. The DC powersupplies X and Y are fed to drive the insulation circuits Z1, Z2 and thecontrol circuits LS1, LS2.

Each of the inverter circuits I2 and I3 includes circuits similar to theinsulation circuits Z1, Z2 and the control circuits LS1, LS2 andrequires power supplies similar to the DC power supplies X and Y. Thedrive circuit for the AC input three-phase motor requires at least fourDC power supplies since separate DC power supplies are connectedrespectively to the control circuits in the high potential portions suchas the control circuit LS1 and a DC power supply is commonly connectedto the control circuits in the low potential portions similar to thecontrol circuit LS2.

The brake circuit BK applies electrical brakes to the motor M whichtends to keep rotating after receiving a stop signal from the externalcontroller 6. The circuit arrangement of the control block SB4 forcontrolling the transistor Q7 is similar to that of the circuits forcontrolling the low potential transistors in the control blocks SB1 toSB3, and is connected to the external controller 6.

The inverter circuits I1, I2, I3 are well known in the art, and thedescription of the detailed circuit arrangements thereof will be omittedherein.

As above stated, the conventional controller for the power devices hasrequired particular insulating elements such as photocouplers forinsulation of the control signal. In particular, insulation ofhigh-frequency noises has necessitated an advanced insulation techniqueand costly insulating elements.

The control signal is given from the external controller 6 through theinsulating means, resulting in the power devices being less responsiveto the control signal and being difficult to integrate.

Further, it has been necessary to individually apply the drive powersupply to the control circuits positioned in the high and low potentialportions through the isolation transformer TR, which causes an increasedsize of the power supply portion and a large amount of powerconsumption. The need for the particular insulating elements, such asphotocouplers, as insulating means results in an increased size of amodule (Intelligent Power Module; referred to as an IPM hereinafter)designed such that an integrated controller for power devices includinga protective circuit, the power devices, and a control power supply areencapsulated in a single package.

SUMMARY OF THE INVENTION

For a power device including in-series connected first and secondsemiconductor circuits between first and second main power supplypotentials, the conduction of at least the first semiconductor circuitbeing controllable by a control signal, the first and secondsemiconductor circuits providing an output at their connection node, thepresent invention is intended for a controller for controlling the powerdevice in response to an input signal generated based on the second mainpower supply potential. According to the present invention, thecontroller comprises: first signal generator means for generating afirst signal in response to the input signal; level shift means forlevel-shifting the first signal toward the first main power supplypotential to produce a second signal; and control signal generator meansfor generating the control signal for the first semiconductor circuit inresponse to the second signal, wherein the level shift means includes atleast one level shifting semiconductor element between the first andsecond main power supply potentials and controlled by the first signal,the at least one level shifting semiconductor element having a breakdownvoltage characteristic which is not less than a voltage between thefirst and second main power supply potentials.

According to the controller of the present invention, the firstsemiconductor circuit is controlled by the input signal generated on thebasis of the second main power supply potential through the level shiftmeans including at least one level shifting semiconductor elementbetween the first and second main power supply potentials and controlledby the first signal and having the breakdown voltage characteristicwhich is not less than the voltage between the first and second mainpower supply potentials. This increases the responsiveness of the powerdevice to the control signal and improves the integration.

Preferably, the first signal generator means includes pulse generatormeans for generating a pulse in response to level transition of theinput signal to use the pulse as the first signal; the second signal isa shifted pulse obtained by level-shifting the pulse by the level shiftmeans; and the control signal generator means includes latch means forlatching the shifted pulse as the first signal to generate the controlsignal for the first semiconductor circuit.

The pulse responsive to the level transition of the input signal islevel-shifted to provide the shifted pulse which acts as the controlsignal for the first semiconductor circuit. The first signal generatormeans, the level shift means, and the control signal generator means aresimple in construction.

Preferably, the pulse generator means is means for generating first andsecond pulses in response to positive and negative level transitions ofthe input signal, respectively, to use the first and second pulses asthe first signal; the level shift means includes first and second levelshifting semiconductor elements provided between the first and secondmain power supply potentials and having a breakdown voltagecharacteristic which is not less than a voltage between the first andsecond main power supply potentials, the first and second level shiftingsemiconductor elements level-shifting the first and second pulses towardthe first main power supply potential to generate first and secondshifted pulses, thereby to provide the second signal; and the latchmeans latches the second signal including the first and second shiftedpulses to use the second signal as the control signal for the firstsemiconductor circuit.

The first and second pulses responsive to the positive and negativelevel transitions of the input signal are level-shifted to produce thefirst and second shifted pulses which act as the control signal for thefirst semiconductor circuit. With the input signal applied over a longperiod of time, the level shifting semiconductor elements are preventedfrom receiving loads over a long period of time and are thus protected.This permits reduction in power consumption.

Preferably, the controller further comprises first operation abnormalitydetector means for detecting an abnormal operation in the firstsemiconductor circuit to generate a first abnormality indication signalhaving a level based on the first main power supply potential; and thelevel shift means further includes a third level shifting semiconductorelement provided between the first and second main power supplypotentials and having a breakdown voltage characteristic which is notless than a voltage between the first and second main power supplypotentials, the third level shifting semiconductor elementlevel-shifting the first abnormality indication signal toward the secondmain power supply potential to produce a second abnormality indicationsignal; and the second abnormality indication signal is a feedbacksignal to a circuit for generation of the input signal.

Since the first abnormality indication signal indicative of the abnormaloperation in the first semiconductor circuit is level-shifted toward thesecond power supply potential by the third level shifting semiconductorelement and is fed back to the circuit for generation of the inputsignal, the input signal is controlled to cancel the abnormal operationin the first semiconductor circuit.

Preferably, the first operation abnormality detector means includesabnormality indication signal pulse generator means for generating apulse in response to level transition of the first abnormalityindication signal to use the pulse as a pulse signal for the firstabnormality indication signal; the second abnormality indication signalis a shifted pulse obtained by level-shifting the pulse signal for thefirst abnormality indication signal by the third level shiftingsemiconductor element; and the level shift means includes feedbacksignal latch means for latching the shifted pulse as the secondabnormality indication signal to generate the feedback signal to thecircuit for generation of the input signal.

The first abnormality indication signal indicative of the abnormaloperation in the first semiconductor circuit is converted into the pulsesignal, which is level-shifted toward the second main power supplypotential by the third level shifting semiconductor element. Thelevel-shifted signal is applied to the circuit for generation of theinput signal as the feedback signal by the feedback signal latch means.This provides the more practical controller for canceling the abnormaloperation in the first semiconductor circuit.

Preferably, a first controllable semiconductor element included in thefirst semiconductor circuit and the first and second level shiftingsemiconductor elements are of a first conductivity type; and the thirdlevel shifting semiconductor element is of a second conductivity type.

The level shift from the second main power supply potential to the firstmain power supply potential and the level shift from the first mainpower supply potential to the second main power supply potential areperformed without hindrance. The practical circuit arrangement isachieved.

Preferably, the control signal for the first controllable semiconductorelement is a first control signal; the control signal generator means isfirst control signal generator means; the second semiconductor circuitincludes a second controllable semiconductor element, the conduction ofwhich is controllable by a second control signal; and the controllerfurther comprises second control signal generator means for generatingthe second control signal in response to the input signal.

The conduction of the second semiconductor circuit is also controllable.This meets the requirement for the controller to control both the firstand second semiconductor circuits.

According to another aspect of the present invention, for a power deviceincluding in-series connected first and second semiconductor circuitsbetween first and second main power supply potentials, the conduction ofthe first and second semiconductor circuits being controllable by firstand second control signals, respectively, the first and secondsemiconductor circuits providing an output at their connection node, acontroller for generating the first and second control signals inresponse to an input signal generated based on the second main powersupply potential, the controller comprises: at least one semiconductorelement having a breakdown voltage characteristic which is not less thana voltage between the first and second main power supply potentials forgenerating the first control signal in response to the input signal andfor separating potential levels of the first and second control signalsfrom each other.

Since the first semiconductor circuit is controlled by the input signalgenerated on the basis of the second main power supply potential, theresponsiveness of the power device to the control signal is increased,and the integration is improved.

Preferably, the controller further comprises: a current detectingresistor between an electrode of the second controllable semiconductorelement which outputs a main current and the second main power supplypotential for detecting and converting the main current flowing throughthe second controllable semiconductor element into a voltage signalcorresponding to the main current; and analog signal output meansreceiving the voltage signal corresponding to the main current forfeeding back a value of the main current indicated by the voltage signalto the second control signal generator means in the form of an analogsignal.

The main current for the second controllable semiconductor element isconverted into the voltage signal, and the analog signal output meansfeeds back the value of the main current indicated by the voltage signalto the second control signal generator means as the analog signal. Theoperation of the second controllable semiconductor element is sensed inreal time, and the analog signal output means is readily modularized.This permits size reduction of the device.

Preferably, the analog signal output means includes: delay signalgenerator means for causing the second control signal to delay togenerate a delay signal; a gate element having an input and an outputand receiving the voltage signal at the input for opening and closing atransmission path of the voltage signal from the input to the output inresponse to the delay signal; and a capacitor between the output of thegate element and the second main power supply potential, and the analogsignal is provided at the output.

This provides the more practical analog signal output means.

Preferably, the controller further comprises: second operationabnormality detector means for detecting an abnormal operation in thesecond semiconductor circuit to generate a third abnormality indicationsignal having a level based on the second main power supply potential;and abnormality indication signal identifying means for identifying thesecond and third abnormality indication signals to feed back a result ofthe identification to the circuit for generation of the input signal.

The abnormal conditions in the first and second controllablesemiconductor elements can be identified, and these means are readilymodularized. This permits size reduction of the device.

Preferably, the controller further comprises: input interlock means fordetecting timings of generation of the first and second control signalsto prevent the first and second control signals from being outputtedsimultaneously.

The disadvantage due to simultaneous operation of the first and secondcontrollable semiconductor elements is prevented.

Preferably, the controller further comprises: PWM signal generator meansfor generating first and second PWM signals in response to the inputsignal, the first and second control signals being generated in responseto the first and second PWM signals, respectively.

This allows generation of a signal pattern which turn ON one of thefirst and second controllable semiconductor elements.

Preferably, the controller is integrated on a single or a plurality ofsemiconductor substrates and is driven by a single operation powersupply for feeding a voltage between the first and second main powersupply potentials.

Size reduction of the device is accomplished.

The present invention is also intended for a drive controller for amotor.

According to the present invention, the drive controller comprises:in-series connected first and second semiconductor circuits betweenfirst and second main power supply potentials; a controller for a powerdevice as recited above; a brake circuit in parallel with the first andsecond semiconductor circuits for applying an electrical brake to themotor in response to a predetermined stop signal; and a convertercircuit for rectifying an AC power supply to provide the first andsecond main power supply potentials, the first and second semiconductorcircuits, the controller, the brake circuit, and the converter circuitbeing provided in the form of a module.

The motor drive controller is achieved which is reduced in size and hasa good responsiveness of the motor to the control signal.

Preferably, the module includes an active filter circuit for increasinga power rate of the drive controller.

There is no need to provide the active filter circuit on the outside ofthe device. In addition, the motor drive controller is reduced in size.

Preferably, the module includes a power supply circuit for supplyingpower for the controller recited above from the AC power supply.

The size-reduced motor drive controller is accomplished.

Preferably, the drive controller further comprises: a charge pumpcircuit between the power supply circuit and a connection point of thefirst and second semiconductor circuits, the charge pump circuitincluding a first diode and a capacitor connected in series in orderfrom a positive output of the power supply circuit; and a second diodebetween the first diode and a control electrode of the firstcontrollable semiconductor element of the first semiconductor circuit,the second diode having a negative electrode connected to a negativeelectrode of the first diode.

The provision of the second diode in the charge pump circuit preventsthe potential at the control electrode of the first controllablesemiconductor element of the first semiconductor circuit from increasingdue to electrical induction generated during the operation of the secondsemiconductor circuit. This prevents simultaneous operation of the firstand second semiconductor circuits and, accordingly, prevents a shortcircuit between the first and second power supply potentials.

It is therefore a primary object of the present invention to providecontroller for a power device which requires no particular elements forindividually insulating high and low potential portions and no insulatedpower supplies.

It is another object of the invention to provide a drive controller fora motor which employs the controller of the power device and which ismodularized.

These and other objects, features, aspects and advantages of the presentinvention will become more apparent from the following detaileddescription of the present invention when taken in conjunction with theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1 to 3 illustrate a controller for a power device according to afirst preferred embodiment of the present invention;

FIG. 4 illustrates the power device controller according to a secondpreferred embodiment of the present invention;

FIGS. 5 and 6 illustrate the power device controller according to athird preferred embodiment of the present invention;

FIGS. 7 and 8 are timing charts illustrating the operation of the powerdevice controller of the third preferred embodiment;

FIG. 9 illustrates the power device controller according to the thirdpreferred embodiment of the present invention;

FIG. 10 illustrates the power device controller according to a fourthpreferred embodiment of the present invention;

FIGS. 11 and 12 illustrate the power device controller according to afifth preferred embodiment of the present invention;

FIG. 13 illustrates the power device controller according to a sixthpreferred embodiment of the present invention;

FIG. 14 illustrates the power device controller according to a seventhpreferred embodiment of the present invention;

FIGS. 15A to 15E are timing charts illustrating the operation of thepower device controller of the seventh preferred embodiment;

FIGS. 16 and 17 illustrate the power device controller according to aneighth preferred embodiment of the present invention;

FIG. 18 is a timing chart illustrating the operation of the power devicecontroller of the eighth preferred embodiment;

FIGS. 19 and 20 illustrate a drive controller for a motor according to aninth preferred embodiment of the present invention;

FIG. 21 is a plan view of the motor drive controller of the ninthpreferred embodiment in a packaged form;

FIG. 22 is a perspective view of the packaged motor drive controller ofthe ninth preferred embodiment;

FIG. 23 is a plan view of the motor drive controller of the ninthpreferred embodiment in another packaged form;

FIG. 24 is a perspective view of the packaged motor drive controller ofFIG. 23 according to the ninth preferred embodiment;

FIG. 25 illustrates the motor drive controller according to a tenthpreferred embodiment of the present invention; and

FIGS. 26 and 27 illustrate a background art drive controller for a motoremploying a controller for a power device.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

<First Preferred Embodiment>

FIG. 1 is a circuit diagram of a controller for power devices accordingto a first preferred embodiment of the present invention. Referring toFIG. 1, transistors Q1 and Q2 which are power devices such as IGBTs(insulated gate bipolar transistors) and which have a high breakdownvoltage characteristic (for example, a breakdown voltage of not lessthan 800 V) are totem-pole connected between main power supply lines Pand N. Free-wheeling diodes D1 and D2 are connected in inverse-parallelwith the transistors Q1 and Q2, respectively. The transistors Q1, Q2 anda transistor Q_(LV) to be described later are N-channel transistors.

An inductive load 8 has a first end connected to a connection point Ubetween the emitter electrode of the transistor Q1 and the collectorelectrode of the transistor Q2 which are totem-pole connected, and asecond end connected to a connection point of capacitors CD1 and CD2connected in series between the lines P and N. The main power supplyline P is connected to a power supply potential V_(CC) and the mainpower supply line N is connected to a ground potential GND.

The transistors Q1 and Q2 are drive controlled on the basis of differentcontrol signals S_(Q1) and S_(Q2), respectively. The control signalS_(Q1) is based on the power supply potential V_(CC) and the controlsignal S_(Q2) is based on the ground potential GND.

Construction of a controller α1 for controlling the transistors Q1 andQ2 will be discussed below. The controller α1 is connected to inexternal controller 6 employing a microcomputer and the like. Theexternal controller 6 is connected to a second internal control circuit4 which is in turn connected to a level shift circuit 5 and the gateelectrode of the transistor Q2.

A voltage V1 is applied to the controller α1 from a control power supplyPS to operate the controller α1. The reference potentials for theexternal controller 6, the second internal control circuit 4, and thelevel shift circuit 5 are the ground potential GND.

The level shift circuit 5 is connected to a first internal controlcircuit 3 which is in turn connected to the gate electrode of thetransistor Q1. A charge pump circuit 7 is connected to the firstinternal control circuit 3. The reference potential for the firstinternal control circuit 3 is the potential at the connection point U.

The charge pump circuit 7 includes a diode DP and a capacitor CP whichhave a high breakdown voltage characteristic (for example, a breakdownvoltage of not less than 800 V). The diode DP has a positive electrodeconnected to a power supply line of the voltage V1, and a negativeelectrode connected to the first internal control circuit 3. Thecapacitor CP is connected between the negative electrode of the diode DPand the connection point U.

The charge pump circuit 7 operates in a manner to be described below.When the transistor Q1 is OFF and the transistor Q2 is ON, the potentialat the connection point U approximates the ground potential GND. Thencurrent flows from the control power supply PS through the diode DP, thecapacitor CP and the transistor Q2 to the ground potential GND. Part ofthe current is a charging current for the capacitor CP, and a voltagecorresponding to the electrical charge is developed across the capacitorCP. Since a forward voltage drop is small in the diode DP, the voltageacross the capacitor CP substantially equals a voltage developed by thecontrol power supply PS. Thus, the voltage corresponding to thatdeveloped by the control power supply PS is applied to the firstinternal control circuit 3.

When the transistor Q1 is ON and the transistor Q2 is OFF, the potentialat the connection point U is generally equal to the power supply voltageV_(CC). The potential at the connection point of the diode DP and thecapacitor CP is higher than the potential at the connection point U bythe voltage across the capacitor CP which is generally equal to thevoltage developed by the control power supply PS as above described.Thus, the voltage corresponding to that developed by the control powersupply PS is applied to the first internal control circuit 3. Thecapacitor CP is discharged in certain amounts by feeding the supplypower to the first internal control circuit 3 but is charged by thecontrol power supply PS in compensation for the discharge when thetransistor Q1 turns OFF and the transistor Q2 turns ON again.

As above stated, the voltage higher than the potential at the connectionpoint U by a relatively substantially constant voltage is fed from thecharge pump circuit 7 to the first internal control circuit 3 if thetransistors Q1 and Q2 turn ON in an alternating manner thereby varyingthe potential at the connection point U between the power supplypotential V_(CC) and the ground potential GND.

The use of the charge pump circuit 7 allows the control power supply PSin the low potential portion to place into operation the controlcircuits in the high and low potential portions, that is, the first andsecond internal control circuits 3 and 4 thereby to control thetransistors Q1 and Q2. This accomplishes a single control power supply.

Operation of the controller α1 will be described with reference to FIGS.1 to 3. Referring now to FIG. 1, a pulse signal for alternately drivingthe transistors Q1 and Q2 for switching operation thereof is applied inthe form of an input signal S_(IN) to the second internal controlcircuit 4 from the external controller 6. The second internal controlcircuit 4 receives the input signal S_(IN) and provides a control signalS_(LV) for drive control of the level shift circuit 5 and applies acontrol signal S_(Q2) to the gate electrode of the transistor Q2.

The transistors Q1, Q2, the diode DP and a transistor Q_(LV) to bedescribed later (FIG. 2) are required to have a breakdown voltage ofabout 1200 V in consideration of an overshoot voltage developed duringthe ON/OFF operation of the transistor Q1 where the main power supplypotential is 800 V.

<Second Internal Control Circuit 4>

FIG. 2 is a circuit diagram of the second internal control circuit 4 andthe level shift circuit 5. Referring to FIG. 2, the second internalcontrol circuit 4 includes a signal transmission/reception logic circuitSD and a shot pulse generator circuit SS. The signaltransmission/reception logic circuit SD includes a logic circuit andjudges whether the entered input signal S_(IN) is to be applied to thetransistor Q1 or to the transistor Q2. When the input signal S_(IN) isto be applied to the transistor Q1, the signal transmission/receptionlogic circuit SD directs the shot pulse generator circuit SS to transmita shot pulse SP based on the input signal S_(IN) to the level shiftcircuit 5. The shot pulse SP is applied to the level shift circuit 5through a driver circuit DR_(LV) in the form of the control signalS_(LV). On the other hand, when the input signal S_(IN) is to be appliedto the transistor Q2, the signal transmission/reception logic circuit SDapplies the control signal S_(Q2) to the transistor Q2 through a drivercircuit DR_(Q2).

<Level Shift Circuit 5>

The level shift circuit 5 includes a current mirror circuit CM and atransistor Q_(LV) having a high breakdown voltage characteristic (forexample, a breakdown voltage of not less than 800 V). The current mirrorcircuit CM includes a transistor Q_(C1), having connected collector andgate electrodes, and a transistor Q_(C2) having a gate electrodeconnected to the collector electrode of the transistor Q_(C1). Thecollector electrode of the transistor Q_(C1) is connected to the shotpulse generator circuit SS, and the collector electrode of thetransistor Q_(C2) is connected to the emitter electrode of thetransistor Q_(LV). In some cases, the collector electrode of thetransistor Q_(C1) is connected to the output of the driver circuitDR_(LV).

Upon turning ON in response to the control signal (pulse) S_(LV) fromthe second internal control circuit 4, the transistor Q_(LV) applies alevel shift signal LV as a shifted pulse to the first internal controlcircuit 3. The level shift signal LV in this case is provided as a lowpotential signal specified by the ground potential GND. (The lowpotential signal is referred to as "L" and a high potential signal as"H" hereinafter.)

The reason for provision of the current mirror circuit CM will bedescribed below. When the transistor Q_(LV) is ON, current flowingthrough the transistor Q_(LV) varies, with a constant voltage applied tothe transistor Q_(LV), to thermally stress the transistor Q_(LV), insome cases deteriorating its characteristics and shortening its life asan element. The provision of the current mirror circuit CM between theground potential and the emitter electrode of the transistor Q_(LV)limits the current flowing through the transistor Q_(C1) and accordinglylimits the current flowing through the transistor Q_(LV) therebyreducing the thermal stresses on the transistor Q_(LV).

<First Internal Control Circuit 3>

FIG. 3 is a circuit diagram of the first internal control circuit 3. Thefirst internal control circuit 3 includes a resistor R and an inverterIG as shown in FIG. 3. The level shift circuit 5 is connected to thenegative electrode of the diode DP, and the resistor R is connectedbetween the negative electrode of the diode DP and the level shiftcircuit 5. The input of the inverter IG connected in parallel with thecapacitor CP is connected to a connection point ND between the resistorR and the level shift circuit 5.

The capacitor CP is charged by the control power supply SP. Thus, thesignal potentials "H" and "L" of the inverter IG are determined by thevoltage charging the capacitor CP.

On receipt of the level shift signal LV from the level shift circuit 5,the connection point ND has the "L" potential, and the output signalfrom the inverter IG which is "H" is applied to a driver circuitDR_(Q1). Then a control signal S_(Q1) which is "H" is applied to thetransistor Q1 through the driver circuit DR_(Q1), and the transistor Q1turns ON.

The inverter IG in the simplest form is achieved by connecting thesource electrode of a P-channel MOS transistor to the negative electrodeof the diode DP and connecting the drain electrode thereof to the drivercircuit DR_(Q1). In this case, the level shift signal LV from the levelshift circuit 5 which is "L" is applied to the gate electrode of theP-channel MOS transistor to turn ON the P-channel MOS transistor whichthen provides an "H" output signal to the driver circuit DR_(Q1).

There is provided, in FIG. 3, a diode PUD having a positive electrodeconnected to the gate electrode of the transistor Q1 and a negativeelectrode connected to the negative electrode of the diode DP. In theoperation of the charge pump circuit 7, the transistor Q2 when turned ONmay induce the gate electrode of transistor Q1 to have a raisedpotential to simultaneously turn ON the transistor Q1, resulting in ashort circuit between the lines P and N. To prevent such a shortcircuit, the diode PUD is provided for fixing the potential at the gateelectrode. This is an effective construction when the first internalcontrol circuit 3 includes the charge pump circuit 7. That is, if thetransistor Q2 in the ON state induces the gate electrode of thetransistor Q1 and the potential at the gate electrode of the transistorQ1 tends to rise, the raised gate potential of the transistor Q1 causesthe induced charge to be discharged through the diode PUD, therebypreventing increase in potential at the gate electrode of the transistorQ1.

<Characteristic Function and Effect of First Preferred Embodiment>

As above described, according to the controller α1 for power devices inthe first preferred embodiment of the present invention, the level shiftcircuit 5 including the transistors having the high breakdown voltagecharacteristic (for example, a breakdown voltage of not less than 800 V)causes the low potential portion using the ground potential GND as thereference potential to apply the control signal to the transistor Q1 inthe high potential portion using the power supply potential V_(CC) asthe reference potential. This eliminates the need for provision of theinsulating means employing a photocoupler and the like between the highand low potential portions, thereby increasing the responsiveness of thetransistor Q1 to the control signal.

The use of the charge pump circuit as a power supply for driving variouscircuits in the high potential portion eliminates the need for provisionof an insulated power supply for the high potential portion, achievingthe size reduction of the power supply portion and the decrease in powerconsumption.

<Second Preferred Embodiment>

FIG. 4 is a circuit diagram of the power device controller according toa second preferred embodiment of the present invention. The secondpreferred embodiment of FIG. 4 is similar in basic construction to thefirst preferred embodiment shown in FIG. 1 except the differencesdescribed below. While the totem-pole connected transistors Q1 and Q2are alternately operated for current control of the inductive load 8 inthe first preferred embodiment, the second preferred embodimentcomprises a diode DH, in place of the transistor Q2, having a highbreakdown voltage characteristic (for example, a breakdown voltage ofnot less than 800 V) and connected in parallel with the inductive load8, and a controller α2 connected to the transistor Q1.

The diode DH preferably has a breakdown voltage of about 1200 V inconsideration of the overshoot voltage developed during the ON/OFFoperation of the transistor Q1 where the main power supply potential is800 V.

In such a circuit arrangement, when the transistor Q1 turns ON, thepower supply potential V_(CC) is applied between the connection point Uand the line N, using the ground potential GND as the referencepotential, and current is fed to the inductive load 8. When thetransistor Q1 turns OFF, there is no potential difference between theconnection point U and the line N, and the current supply to theinductive load 8 is stopped. In this manner, only the switchingoperation of the transistor Q1 allows current control for the inductiveload 8.

The absence of the transistor Q2 in this circuit arrangement eliminatesthe need for the driver circuit DR_(Q2) shown in FIG. 2 for driving thetransistor Q2 and the need for the function of the signaltransmission/reception logic circuit SD to apply the control signalS_(Q2) to the transistor Q2.

<Characteristic Function and Effect of Second Preferred Embodiment>

Like the power device controller of the first preferred embodiment, thesecond preferred embodiment accomplishes the increased responsiveness ofthe power devices and the decrease in power consumption.

<Third Preferred Embodiment>

FIG. 5 is a circuit diagram of the power device controller according toa third preferred embodiment of the present invention. The thirdpreferred embodiment of FIG. 5 is similar to the first preferredembodiment in construction and operation of the transistors Q1 and Q2between the main power supply lines P and N, and the description thereofwill be omitted herein. The transistors; Q1, Q2 and transistors Q_(LV1),Q_(LV2) to be described later are N-channel transistors.

The transistors Q1, Q2, the diode DP, and transistors Q_(LV1) andQ_(LV2) preferably have a breakdown voltage of about 1200 V inconsideration of the overshoot voltage developed during the ON/OFFoperation of the transistor Q1 where the main power supply potential is800 V.

The construction of a controller α3 for controlling the transistors Q1and Q2 will be discussed below. The controller α3 is connected to theexternal controller 6 employing a microcomputer and the like. Theexternal controller 6 is connected to a second internal control circuit4A which is in turn connected to a level shift circuit 5A and the gateelectrode of the transistor Q2. The control power supply PS applies thevoltage V1 to the second internal control circuit 4A to place the secondinternal control circuit 4A into operation. The reference potentials forthe external controller 6, the second internal control circuit 4A andthe level shift circuit 5A are the ground potential GND.

The level shift circuit 5A is connected to a first internal controlcircuit 3A which is in turn connected to the gate electrode of thetransistor Q1. The charge pump circuit 7 is connected to the firstinternal control circuit 3A. The first internal control circuit 3A isconnected to the connection point U so that the potential at theconnection point U is the reference potential therefor. The constructionand operation of the charge pump circuit 7 of the third preferredembodiment are similar to those of the first preferred embodiment, andthe description thereof will be omitted herein.

Operation of the controller α3 is described below with reference toFIGS. 5 to 9. Referring to FIG. 5, the input signal S_(IN) which is apulse signal for alternately driving the transistors Q1 and Q2 forswitching operation thereof is applied to the second internal controlcircuit 4A from the external controller 6. The second internal controlcircuit 4A receives the input signal S_(IN) and provides control signalsS_(LV1) and S_(LV2) for drive control of the level shift circuit 5A andapplies the control signal S_(Q2) to the gate electrode of thetransistor Q2.

<Second Internal Control Circuit 4A>

FIG. 6 is a circuit diagram of the second internal control circuit 4Aand the level shift circuit 5A. Referring to FIG. 6, the second internalcontrol circuit 4A includes a signal transmission/reception logiccircuit SDA and shot pulse generator circuits SS1 and SS2. The signaltransmission/reception logic circuit SDA includes a logic circuit andjudges whether the entered input signal S_(IN) is to be applied to thetransistor Q1 or to the transistor Q2. When the input signa S_(IN) is tobe applied to the transistor Q1, the signal transmission/reception logiccircuit SDA directs the shot pulse generator circuit SS1 or the shotpulse generator circuit SS2 to transmit a shot pulse SP1 or a shot pulseSP2 based on the input signal S_(IN) to the level shift circuit 5A. Theshot pulse SP1 is impressed upon the level shift circuit 5A through adriver circuit DR_(LV1) in the form of the control signal S_(LV1), andthe shot pulse SP2 is impressed upon the level shift circuit 5A througha driver circuit DR_(LV2) in the form of the control signal S_(LV2).

On the other hand, when the input signal S_(IN) is to be applied to thetransistor Q2, the signal transmission/reception logic circuit SDAimpresses the control signal S_(Q2) upon the transistor Q2 through thedriver circuit DR_(Q2).

The reason why the input signal S_(IN) is divided into the shot pulsesSP1 and SP2 for transmission thereof is described below. In the firstpreferred embodiment, the input signal S_(IN) is applied as the shotpulse SP to the driver circuit DR_(LV) through which the control signalS_(LV) is applied to the level shift circuit, and the transistor Q_(LV)is held ON while the control signal S_(LV) is maintained. In thissystem, when the input signal S_(IN) is a long pulse of the order offrom nanoseconds to seconds, the transistor Q_(LV) is held ON for anaccordingly long time. The high-breakdown-voltage transistor Q_(LV) inthe ON state passes an emitter current, with a collector-emitter voltageincreased. This results in an extremely large amount of powerconsumption and thermal stresses upon the transistor Q_(LV), which mightdeteriorate the characteristics of the transistor Q_(LV) and shorten itslife as an element in some cases.

FIG. 7 is a timing chart of the operation of the transistor Q_(LV).Referring to FIG. 7, as the control signal S_(LV) entered turns ON thetransistor Q_(LV), a collector-emitter voltage V_(CE) is slightlydropped from the power supply potential V_(CC) (exactly from a potentialslightly higher than the power supply potential V_(CC) ) and a largecollector-emitter current ICE flows. For instance, where the powersupply potential V_(CC) is 800 V, the collector-emitter voltage V_(CE)is generally equal to 800 V, and the consumed power is the product ofthe collector-emitter current I_(CE) and the voltage V_(CE).

The second internal control circuit 4A of the third preferred embodimentdetects the rising and falling edges of the long-pulse input signalS_(IN) and provides the pulse signal SP1 or SP2 so as to hold thetransistor Q_(LV) ON for a small amount of rising and falling time.

FIG. 8 is a timing chart illustrating the transmission of the shotpulses SP1 and SP2 in response to the input signal S_(IN), as anexample. The shot pulses SP1 and SP2 are transmitted for a small amountof time in response to the rising and falling edges of the input signalS_(IN).

Referring again to FIG. 6, upon detecting the rising edge of the inputsignal S_(IN), the signal transmission/reception logic circuit SDAcauses the shot pulse generator circuit SS1 to transmit the shot pulseSP1 to the driver circuit DR_(LV1) for a small amount of rising time.Upon detecting the falling edge of the input signal S_(IN), the signaltransmission/reception logic circuit SDA causes the shot pulse generatorcircuit SS2 to transmit the shot pulse SP2 to the driver circuitDR_(LV2) for a small amount of falling time.

<Level Shift Circuit 5A>

With continued reference to FIG. 6, the level shift circuit 5A includesa transistor Q_(LV1) receiving the control signal S_(LV1) from thedriver circuit DR_(LV1) and having a high breakdown voltagecharacteristic (for example, a breakdown voltage of not less than 800V), a current mirror circuit CM1 connected to the transistor Q_(LV1), atransistor Q_(LV2) receiving the control signal S_(LV2) from the drivercircuit DR_(IN) ₂ and having a high breakdown voltage characteristic(for example, a breakdown voltage of not less than 800 V), and a currentmirror circuit CM2 connected to the transistor Q_(LV2).

The current mirror circuit CM1 includes a transistor Q_(C1) havingconnected collector and gate electrodes, and a transistor Q_(C2) havinga gate electrode connected to the collector electrode of the transistorQ₁. The collector electrode of the transistor Q_(C1) is connected to theshot pulse generator circuit SS1, and the collector electrode of thetransistor Q_(C2) is connected to the emitter electrode of thetransistor Q_(LV1). The current mirror circuit CM2 is similar inconstruction to the current mirror circuit CM1. The collector electrodeof a transistor Q_(C4) is connected to the emitter electrode of thetransistor Q_(LV2) , and the collector electrode of a transistor Q_(C3)is connected to the shot pulse generator circuit SS2.

In some cases, the collector electrodes of the transistors Q_(C1) andQ_(C3) are connected to the outputs of the driver circuits DR_(LV1) andDR_(LV2), respectively.

As the control signal S_(LV1) from the second internal control circuit4A turns ON the transistor Q_(LV1), a level shift signal LV1 indicativeof the rising edge of the input signal S_(IN) is applied to the firstinternal control circuit 3A. As the control signal S_(LV2) turns ON thetransistor Q_(LV2) , a level shift signal LV2 indicative of the fallingedge of the input signal S_(IN) is applied to the first internal controlcircuit 3A. The level shift signals LV1 and LV2 are not simultaneouslyprovided. It should be noted that the level shift signals LV1 and LV2are "L" when provided. The reason for the provision of the currentmirror circuits CM1 and CM2 of the third preferred embodiment is similarto that of the first preferred embodiment.

<First Internal Control Circuit 3A>

FIG. 9 is a circuit diagram of the first internal control circuit 3A.Referring to FIG. 9, the first internal control circuit 3A includes alatch circuit RS in addition to the inverter IG, the driver circuitDR_(Q1), the resistor R, and the diode PUD which are described in thefirst preferred embodiment. The latch circuit RS receives the levelshift signals LV1 and LV2 from the level shift circuit 5A.

On receipt of the level shift signal LV1, the latch circuit RS is set,and the potential at the connection point ND becomes "L". Then theoutput signal from the inverter IG which is "H" is impressed upon thedriver circuit DR_(Q1) through which the control signal S_(Q1) which is"H" is applied to the transistor Q1, and the transistor Q1 turns ON. Onreceipt of the level shift signal LV2, the latch circuit RS is reset,and the transistor Q1 turns OFF. The inverter IG, the drive circuitDR_(Q1), the resistor R, and the diode PUD of the third preferredembodiment are similar in operation to those of the first preferredembodiment, and the description thereof will be omitted herein.

<Characteristic Function and Effect of Third Preferred Embodiment>

In this manner, according to the power device controller of the thirdpreferred embodiment of the present invention, the level shift circuit5A includes the two transistors Q_(LV1) and Q_(LV2) having the highbreakdown voltage characteristic (for example, a breakdown voltage ofnot less than 800 V), and if the long-pulse input signal S_(IN) is givenfrom the external controller 6, the transistors Q_(LV1) and Q_(LV2) areplaced in operation for a small amount of time corresponding to therising and falling edges of the input signal S_(IN) to set and reset thelatch circuit RS in the first internal control circuit 3A, therebycontrolling the transistor Q1. There is no need to hold the levelshifting transistor ON over a long period of time. This permits thelevel shifting transistor to be protected, accomplishing reduction inpower consumption.

The third preferred embodiment also achieves the increasedresponsiveness of the power devices and the decrease in powerconsumption in the same manner as the power device controller of thefirst preferred embodiment.

A buffer circuit having a buffering function may be added between thelatch circuit RS and the level shift circuit 5A. The provision of thebuffer circuit permits impedance matching between the first internalcontrol circuit 3A and the level shift circuit 5A, improving thetransmission property of the level shift signals and thenoise-insulating property.

<Fourth Preferred Embodiment>

FIG. 10 is a circuit diagram of the power device controller according toa fourth preferred embodiment of the present invention The fourthpreferred embodiment of FIG. 10 is similar in basic construction to thethird preferred embodiment of FIG. 5 except the differences describedbelow. While the totem-pole connected transistors Q1 and Q2 arealternately operated for current control of the inductive load 8 in thethird preferred embodiment, the fourth preferred embodiment comprisesthe diode DH, in place of the transistor Q2, having a high breakdownvoltage characteristic (for example, a breakdown voltage of not lessthat 800 V) and connected in parallel with the inductive load 8, and acontroller α4 connected to the transistor Q1.

The diode DH preferably has a breakdown voltage of about 1200 V inconsideration of the overshoot voltage developed during the ON/OFFoperation of the transistor Q1 where the main power supply potential is800 V.

In such a circuit arrangement, when the transistor Q1 turns ON, thepower supply potential V_(CC) is applied between the connection point Uand the line N, using the ground potential GND as the referencepotential, and current is fed to the inductive load 8. When thetransistor Q1 turns OFF, there is no potential difference between theconnection point U and the line N, and the current supply to theinductive load 8 is stopped. In this manner, only the switchingoperation of the transistor Q1 allows current control for the inductiveload 8.

In the circuit arrangement, the absence of the transistor Q2 eliminatesthe need for the driver circuit DR_(Q2) of FIG. 6 for driving thetransistor Q2 and the need for the function of the signaltransmission/reception logic circuit SDA to apply the control signalS_(Q2) to the transistor Q2.

<Characteristic Function and Effect of Fourth Preferred Embodiment>

Like the power device controller of the third preferred embodiment, thefourth preferred embodiment eliminates the need to hold the levelshifting transistor ON for a long period of time to protect the levelshifting transistor and reduces the power consumption. This achieves theincreased responsiveness of the power devices and the decrease in powerconsumption.

<Fifth Preferred Embodiment>

FIG. 11 is a circuit diagram of the power device controller according toa fifth preferred embodiment of the present invention. The fifthpreferred embodiment of FIG. 11 is similar to the first preferredembodiment in construction and operation of the transistors Q1 and Q2between the main power supply lines P and N, and the description thereofwill be omitted herein. The transistors Q1, Q2 and the transistorsQ_(LV1), Q_(LV2) to be described later are N-channel transistors, and atransistor Q_(LV3) to be described later is a P-channel transistor.

Description is now given on the construction of a controller α5 forcontrolling the transistors Q1 and Q2. The controller α5 is connected tothe external controller 6 employing a microcomputer and the like. Theexternal controller 6 is connected to a second internal control circuit4B which is in turn connected to level shift circuits 5A, 5B and thegate electrode of the transistor Q2. The power supply voltage V1 forplacing the second internal control circuit 4B into operation is appliedto the second internal control circuit 4B. The reference potentials forthe external controller 6, the second internal control circuit 4B, andthe level shift circuits 5A, 5B are the ground potential GND.

The level shift circuits 5A and 5B are connected to a first internalcontrol circuit 3B which is in turn connected to the gate electrode ofthe transistor Q1. The charge pump circuit 7 is connected to the firstinternal control circuit 3B. The first internal control circuit 3B isconnected to the connection point U so that the potential at theconnection point U is the reference potential therefor. The constructionof the charge pump circuit 7 of the fifth preferred embodiment issimilar to that of the first preferred embodiment, and the descriptionthereof will be omitted herein.

Operation of the controller α5 is described below with reference to FIG.12. The input signal S_(IN) which is the pulse signal for alternatelydriving the transistors Q1 and Q2 for switching operation thereof isapplied to the second internal control circuit 4B from the externalcontroller 6 as shown in FIG. 12. The second internal control circuit 4Breceives the input signal S_(IN) and either provides the control signalsS_(LV1) and S_(LV2) for drive control of the level shift circuit 5B orapplies the control signal S_(Q2) to the gate electrode of thetransistor Q2. The second internal control circuit 4B receives anabnormality signal AS1 for the transistor Q1 from the first internalcontrol circuit 3B through the level shift circuit 5B and receives anabnormality signal AS2 from the transistor Q2.

The transistors Q1, Q2, the diode DP and the transistors Q_(LV1),Q_(LV2), Q_(LV3) to be described later preferably have a breakdownvoltage of about 1200 V in consideration of the overshoot voltagedeveloped during the ON/OFF operation of the transistor Q1 where themain power supply potential is 800 V.

<Second Internal Control Circuit 4B>

FIG. 12 is a circuit diagram of the second internal control circuit 4B,the level shift circuits 5A, 5B, and the first internal control circuit3B. Referring to FIG. 12, the second internal control circuit 4Bincludes the signal transmission/reception logic circuit SDB and theshot pulse generator circuits SS1, SS2.

The signal transmission/reception logic circuit SDB is identical withthe signal transmission/reception logic circuit SDA of the thirdpreferred embodiment except that the signal transmission/reception logiccircuit SDB has the function of receiving the abnormality signals AS1and AS2 and transmitting a feedback signal F to the external controller6, and the description of the same functions will be omitted herein.

The construction and function of the level shift circuit 5A has beendiscussed in the third preferred embodiment with reference to FIG. 6,and the description thereof is omitted herein.

<First Internal Control Circuit 3B>

With continued reference to FIG. 12, the control signals S_(LV1),S_(LV2) from the level shift circuit 5A are impressed upon the firstinternal control circuit 3B. The first internal control circuit 3B isconstructed such that a means for detecting an abnormal condition in thetransistor Q1 is added to the first internal control circuit 3Adescribed in the third preferred embodiment with reference to FIG. 9.The same construction as the first internal control circuit 3A describedwith reference to FIG. 9 is represented as an interface circuit IF inFIG. 12.

An example of the means for detecting an abnormal condition in thetransistor Q1 is such that a resistor RS1 is connected between the senseelectrode of the transistor Q1 and the connection point U and currentthrough the sense electrode is converted into a sense voltage VS1 whichis then applied to a non-inverting input terminal of an overcurrentprotective circuit OC1 comprised of a comparator. The overcurrentprotective circuit OC1 receives a reference voltage VB1 at its invertinginput terminal, and a shot pulse generator circuit SS3 converts theoutput from the overcurrent protective circuit OC1 into a pulse to applythe pulse as an overcurrent detection signal SO1 to a driver circuitDR_(QS). The output from the overcurrent protective circuit OC1 which isnot converted into the pulse is also applied to the driver circuitDR_(Q1), which in turn controls the operation of the transistor Q1 tocancel the abnormal condition.

Specifically, the driver circuit DR_(Q1), on receipt of the overcurrentdetection signal SO1, interrupts the control signal S_(Q1) to beoutputted to the gate electrode of the transistor Q1 to turn OFF thetransistor Q1.

The driver circuit DR_(QS) is a circuit for driving the level shiftcircuit 5B which feeds back the abnormal condition generated in thetransistor Q1 to the external controller 6 in the low potential portion.Upon receipt of the overcurrent detection signal SO1, the driver circuitDR_(QS) puts the transistor Q_(LV) 3 forming the level shift circuit 5Binto operation.

Means for detecting an abnormal condition in the transistors Q1, Q2 maybe an overvoltage detection process or an abnormal temperature detectionprocess for the transistors Q1, Q2. These processes may be used inparallel combination. In this case, the detection means are connected tothe driver circuit DR_(QS) through an OR circuit or an NOR circuit.

<Level Shift Circuit 5B>

The level shift circuit 5B includes a latch circuit RT and thetransistor Q_(LV3) having a high breakdown voltage characteristic (forexample, a breakdown voltage of not less than 800 V). The driver circuitDR_(QS) is connected to the gate electrode of the transistor Q_(LV3).The source electrode of the transistor Q_(LV3) is connected to thenegative electrode of the diode DP of the charge pump circuit 7, and thedrain electrode of the transistor Q_(LV3) is connected to the potentialat the connection point U.

The latch circuit RT is comprised of, for example, an RS flip-flopcircuit having a set input S connected to the drain electrode of thetransistor Q_(LV3), a reset input R connected to the shot pulsegenerator circuit SS1, and an output Q providing the abnormality signalAS1 to the signal transmission/reception logic circuit SDB.

The signal transmission/reception logic circuit SDB functions to receivethe level-shifted abnormality signal AS1 and transmit the feedbacksignal F to the external controller 6 to indicate the abnormal conditionin the transistor Q1.

A construction for detecting an abnormal condition in the transistor Q2is shown in FIG. 12 as an abnormality detector circuit 4B'. Thisconstruction is fundamentally similar to the construction of theabnormal condition detecting means for the transistor Q1 and is suchthat a resistor RS2 is connected between the sense electrode of thetransistor Q2 and the ground potential and current through the senseelectrode is converted into a sense voltage VS2 which is then impressedupon an non-inverting input terminal of an overcurrent protectivecircuit OC2 comprised of a comparator. The overcurrent protectivecircuit OC2 receives a reference voltage VB2 at its inverting inputterminal, and the output from the overcurrent protective circuit OC2 isapplied as an overcurrent detection signal S02 to the driver circuitDR_(Q2) and the signal transmission/reception logic circuit SDB.

Upon receipt of the overcurrent detection signal SO2, the driver circuitDR_(Q2) interrupts the control signal S_(Q2) to be outputted to the gateelectrode of the transistor Q2 to turn OFF the transistor Q2.

The overcurrent detection signal SO2 is applied to the signaltransmission/reception logic circuit SDB in the form of the abnormalitysignal AS2. The signal transmission/reception logic circuit SDBfunctions to transmit the feedback signal F to the external controller 6to indicate the abnormal condition in the transistor Q2.

<Characteristic Function and Effect of Fifth Preferred Embodiment>

As above stated, the power device controller of the fifth preferredembodiment of the present invention is adapted to detect the abnormalcondition in the transistor Q1 in the high potential portion and thenturn OFF the transistor Q1, thus preventing the breakdown of thetransistor Q1 due to the sustained abnormal condition. The abnormalcondition in the transistor Q1 is transmitted through the level shiftcircuit 5B including the P-channel transistor Q_(LV3) having the highbreakdown voltage characteristic to the second internal control circuit4B in the low potential portion and is then fed back from the secondinternal control circuit 4B to the external controller 6, whereby theabnormal condition in the transistor Q1 is indicated. Further, theabnormal condition in the transistor Q2 is also detected and then thetransistor Q2 is turned OFF, whereby the breakdown of the transistor Q2is prevented.

<Sixth Preferred Embodiment>

FIG. 13 is a circuit diagram of the power device controller according toa sixth preferred embodiment of the present invention. The sixthpreferred embodiment of FIG. 13 is similar in basic construction to thefifth preferred embodiment of FIG. 11 except the differences describedbelow. While the totem-pole connected transistors Q1 and Q2 arealternately operated for current control of the inductive load 8 in thefifth preferred embodiment, the sixth preferred embodiment comprises thediode DH, in place of the transistor Q2, having a high breakdown voltagecharacteristic (for example, a breakdown voltage of not less that 800 V)and connected in parallel with the inductive load 8, and a controlleraαconnected to the transistor Q1.

The diode DH preferably has a breakdown voltage of about 1200 V inconsideration of the overshoot voltage developed during the ON/OFFoperation of the transistor Q1 where the main power supply potential is800 V.

In such a circuit arrangement, when the transistor Q1 turns ON, thepower supply potential V_(CC) is applied between the connection point Uand the line N, using the ground potential GND as the referencepotential, and current is fed to the inductive load 8. When thetransistor Q1 turns OFF, there is no potential difference between theconnection point U and the line N, and the current supply to theinductive load 8 is stopped. In this manner, only the switchingoperation of the transistor Q1 allows the current control for theinductive load 8.

The absence of the transistor Q2 in this circuit arrangement eliminatesthe need for the driver circuit DR_(Q2) of FIG. 12 for driving thetransistor Q2 and the need for the function of the signaltransmission/reception logic circuit SDB to apply the control signalS_(Q2) to the transistor Q2. Also unnecessary are the resistor RS2,overcurrent protective circuit OC2 and reference voltage source VB2 fordetection of the abnormal current in the transistor Q2.

<Characteristic Function and Effect of Sixth Preferred Embodiment>

Like the fifth preferred embodiment, the power device controller of thesixth preferred embodiment of the present invention is adapted to detectthe abnormal condition in the transistor Q1 in the high potentialportion and then turn OFF the transistor Q1, preventing the breakdown ofthe transistor Q1 due to the sustained abnormal condition. The abnormalcondition in the transistor Q1 is transmitted through the level shiftcircuit 5B including the P-channel transistor Q_(LV) ₃ having the highbreakdown voltage characteristic to the second internal control circuit4B in the low potential portion and is then fed back from the secondinternal control circuit 4B to the external controller 6, whereby theabnormal condition in the transistor Q1 is indicated.

According to the power device controller of the first to sixth preferredembodiments of the present invention, the application of the controlsignal to the transistor Q1 in the high potential portion from theexternal controller 6 in the low potential portion or the feedback ofthe signal indicative of the operating condition of the transistor Q1 tothe external controller 6 is carried out such that the control signal orthe feedback signal is transmitted and received through the level shiftcircuit employing the transistor having the high breakdown voltagecharacteristic (for example, a breakdown voltage of not less than 800V). This eliminates the need for particular insulating elements such asphotocouplers and permits the transistor Q1 to be driven by using thecharge pump circuit. Therefore, individual power supplies in the highand low potential portions are not required but the single power supplycan actuate the high and low potential portions.

<Seventh Preferred Embodiment>

<Addition of Analog Current Detector Circuit>

FIG. 14 is a circuit diagram of the power device controller having aprotective device according to a seventh preferred embodiment of thepresent invention. Referring to FIG. 14, a controller α7 comprises ananalog current detector circuit 9 serving as a protective device. Aresistor RS3 is connected between the drain electrode of the transistorQ2 and the ground potential, and the drain electrode of the transistorQ2 is connected to the analog current detector circuit 9. Otherconstructions of the controller α7 are similar to those of thecontroller α5 described with reference to FIG. 12 except that a signaltransmission/reception logic circuit SDC functions to process an outputsignal from the analog current detector circuit 9.

The analog current detector circuit 9 comprises an amplifier circuit A1receiving and amplifying a voltage VS3 obtained by thecurrent-to-voltage conversion in the resistor RS3 between the drainelectrode of the transistor Q2 and the ground potential; a capacitor CHin a later stage of the amplifier circuit A1 between the amplifiercircuit A1 and the ground potential; an amplifier circuit A2 serving asa voltage buffer; an analog switch ASW (gate element) between theamplifier circuit A1 and the amplifier circuit A2; and a delay circuitDL for adding a time delay to a hold signal V_(h) operating the analogswitch ASW in response to a signal V_(i) applied to the driver circuitDR_(Q2). A non-inverting input terminal of the amplifier circuit A1 isconnected to a voltage-divide circuit consisting of in-series connectedresistors R1 and R2 for dividing the sense voltage VS2. An invertinginput terminal of the amplifier circuit A1 is connected to avoltage-divider circuit consisting of in-series connected resistors R3and R4 for dividing a comparison voltage V_(Ref). The amplifier circuitA1 amplifies the voltage VS2 to provide V_(Ref) -VS2×R2/R1.

Operation will be described with reference to FIGS. 15A to 15E. FIGS.15A to 15E are timing charts illustrating the operation of the analogcurrent detector circuit 9. The signal V_(i) as a pulse signal isapplied to the driver circuit DR_(Q2) from the signaltransmission/reception logic circuit SDC (FIG. 15A). A current output ISfrom the transistor Q2 and diode D2 operated in response to the signalVi indicates that current flows alternately to the transistor Q2 and tothe diode D2 (FIG. 15B). Referring to FIG. 15B, the waveform having asharp current peak at the rising edge indicates a transistor currentthrough the transistor Q2, and the waveform developing in the oppositedirection from the transistor current indicates a diode current throughthe diode D2 connected in inverse-parallel with the transistor Q2.

The timing chart of the voltage output VS3 into which the resistor RS3converts the current output IS is shown in FIG. 15C. Electrical chargeand discharge of the capacitor CH are used so as to make the voltageoutput VS3 into a near-analog form. The current value exhibits aprotrusion at the rising edge of the transistor current T because of anabrupt current change during recovery as shown in FIG. 15B. Although notshown, noises and the like are added at the rising edge, and it is thusdisadvantageous to use the transistor current T at the rising edge as asignal.

To prevent the use of the transistor current T at the rising edge asshown in FIG. 15B, the hold signal V_(h) is applied with a time delaycorresponding to the rising edge of the voltage output VS3 (FIG. 15E).

The analog switch ASW is opened and closed by the hold signal V_(h)having a time delay provided by the delay circuit DL and given throughan inverter IG1. When application of the hold signal V_(h) turns ON theanalog switch ASW, the capacitor CH follows an amplified sense voltagesignal and is discharged. When the absence of the hold signal V_(h)turns OFF the analog switch ASW, the capacitor CH is charged and held,and a voltage at the time when the hold signal V_(h) is exhausted ismaintained. The amplifier circuit A2 functions as a voltage buffer andoutputs the amplified sense voltage signal as an analog output voltageV_(cx) (FIG. 15D). As shown in FIG. 15D, the analog output voltageV_(cx) exhibits a near-analog form and is applied to the signaltransmission/reception logic circuit SDC as an analog current outputfrom the transistor Q2 and diode D2.

The analog current is used as a signal directly indicative of theoperating conditions of the inverter circuit and has been detected by ashunt resistor connected to the output of the inverter circuit. Theshunt resistor has a non-negligibly large area relative to the device,and the signal detected by the shunt resistor is required to be appliedto the external controller 6 through an insulating element such as aphotocoupler, resulting in slow response. In the seventh preferredembodiment, however, the analog current is obtained without the shuntresistor and insulating element.

<Characteristic Function and Effect of Seventh Preferred Embodiment>

According to the power device controller of the seventh preferredembodiment of the present invention, the current through the transistorQ2 is directly detected and is then applied to the external controller 6without passing through insulating elements such as photocouplers. Thecurrent through the transistor Q2 is detected in real time. For example,where the set value of the overcurrent for the transistor Q2 is two anda half times the normal current, an overcurrent warning signal may beapplied to the external controller 6 when the overcurrent becomes twicethe normal current, thereby preventing the overcurrent conditions. Sucha function is obtained by detecting the current through the transistorQ2 in real time.

<Eighth Preferred Embodiment>

<Addition of Temperature Abnormality Detector Circuit and Power SupplyVoltage Abnormality Detector Circuit>

FIG. 16 is a circuit diagram of the power device controller with theprotective device according to an eighth preferred embodiment of thepresent invention. A controller α8 of FIG. 16 is constructed such that atemperature abnormality detector circuit TA and a power supply voltageabnormality detector circuit PA as protective devices are added to thecontroller α7 described with reference to FIG. 14. Other constructionsof the controller α8 are similar to those of the controller α7 describedwith reference to FIG. 14 except that a signal transmission/receptionlogic circuit SDD functions to process output signals from thetemperature abnormality detector circuit TA and from the power supplyvoltage abnormality detector circuit PA.

Referring to FIG. 16, the control power supply PS for controlling thetransistors Q1 and Q2 is connected to the power supply voltageabnormality detector circuit PA for detecting an abnormality in thepower supply voltage. The power supply voltage abnormality detectorcircuit PA outputs a predetermined power supply voltage abnormalitydetection signal PAS if the voltage value at the control power supply PSis higher or lower than a preset value. The power supply voltageabnormality detection signal PAS is applied to the signaltransmission/reception logic circuit SDD.

With continued reference to FIG. 16, the temperature abnormalitydetector circuit TA is provided adjacent the transistor Q2. Thetemperature abnormality detector circuit TA detects the temperature ofthe transistor Q2 to detects an abnormal operation of the transistor Q2by using the temperature. The temperature abnormality detector circuitTA outputs a predetermined temperature abnormality detection signal TASif the temperature of the transistor Q2 is higher than a preset value.The temperature abnormality detection signal TAS is applied to thesignal transmission/reception logic circuit SDD.

The signal transmission/reception logic circuit SDD receives theabnormality signals AS1 and AS2 indicative of the abnormal conditions inthe transistors Q1 and Q2 in the same manner as in the fifth preferredembodiment described with reference to FIG. 12, and the analog outputvoltage V_(cx) from the analog current detector circuit 9 in the samemanner as in the seventh preferred embodiment described with referenceto FIG. 14 as well as the temperature abnormality detection signal TASfrom the temperature abnormality detector circuit TA and the powersupply voltage abnormality detection signal PAS from the power supplyvoltage abnormality detector circuit PA.

The construction of the signal transmission/reception logic circuit SDDwill be described below with reference to FIG. 17. The signaltransmission/reception logic circuit SDD receives the input signal fromthe external controller 6, outputs the signals for controlling thetransistors Q1 and Q2, and feeds back the abnormality signals detectedby the protective circuits to the external controller 6.

A PWM (Pulse Width Modulation) signal generator circuit 20 converts theinput signal S_(IN) from the external controller 6 into PWM signalsincluding a signal to be applied to the transistor in the high potentialportion (the transistor Q1 herein) and a signal to be applied to thetransistor in the low potential portion (the transistor Q2 herein) whichare impressed upon input processing circuits 30H and 30L, respectively.

The PWM signals from the PWM signal generator circuit 20 are normallyapplied so that one of the transistor in the high potential portion andthe transistor in the low potential portion turns ON. After turning OFF,practical transistors carry the collector current for a constant periodof time because of the accumulation of carriers. If one of thetransistor turns ON simultaneously with the other transistor turningOFF, a short circuit occurs between the lines P and N, resulting in agreat amount of stresses upon both of the transistors which may causetheir life to be shortened. To prevent such a short circuit between thelines P and N, a dead time generator circuit 50 establishes a time deadTd for making the ON signal at the rising edge to lag behind by apredetermined time.

The presence of the time dead Td produces distortions in the outputvoltage from the inverter circuit, increased higher-harmonic current,and pulsating torque, thus placing the inductive load connected to theinverter circuit into unstable operation. In particular, a highswitching frequency (carrier frequency) of the PWM signalsnon-negligibly influences the output voltage from and current throughthe inverter circuit. For correction of the time dead Td, there isprovided an output signal detector circuit 90 for detecting a voltage atthe output portion (the connection point U herein) of the invertercircuit in the form of a digital signal, and a zero voltage comparatorcircuit 40 compares the voltage at the output portion of the invertercircuit with the PWM signals to output an ON/OFF signal for thetransistors when the time integration of the deviations of the voltageat the output portion of the inverter circuit from the PWM signalsbecomes zero, thereby operating the transistors with the corrected timedead Td.

An input interlock circuit 60 detects the timing of the PWM signals withthe corrected time dead Td to be applied to the transistors in the highand low potential portions. For instance, when the PWM signals to beapplied to the transistors in the high and low potential portions areboth "low" at the same time, the input interlock circuit 60 impresses asimultaneous input detection signal DAS upon an output processingcircuit 70.

FIG. 18 is a timing chart illustrating the operation of the inputinterlock circuit 60. Referring to FIG. 18, when a high potentialportion transistor gate drive output signal V_(HG) and a low potentialportion transistor gate drive output signal V_(LG) become "low" at thesame time, the input interlock circuit 60 latches the simultaneous inputdetection signal DAS. Then, the simultaneous input detection signal DASis reset at the time when the later one of a high potential portiontransistor input signal VH and a low potential portion transistor inputsignal V_(L) changes from "H" to "L".

The output processing circuit 70 receives the abnormality signals AS1,AS2 indicative of the abnormal conditions in the transistors Q1, Q2, thetemperature abnormality detection signal TAS, and the power supplyvoltage abnormality detection signal PAS as well as the simultaneousinput detection signal DAS and then converts the respective detectionsignals into pulses, which are in turn applied to an error output signalgenerator circuit 80.

The error output signal generator circuit 80 identifies the simultaneousinput detection signal DAS and the power supply voltage abnormalitydetection signal PAS as signals indicative of voltage abnormality, theabnormality signals AS1 and AS2 as signals indicative of currentabnormality, and the temperature abnormality detection signal TAS as anerror signal indicative of temperature abnormality, and individuallyfeeds back the respective signals to the external controller 6. Theerror output signal generator circuit 80 also receives and feeds backthe analog output voltage V_(cx) from the analog current detectorcircuit 9 to the external controller 6 as an error signal.

<Characteristic Function and Effect of Eighth Preferred Embodiment>

According to the power device controller of the eighth preferredembodiment of the present invention, there are provided the abnormalitydetection means indicative of the abnormal conditions in the transistorsQ1, Q2, and the protective circuits including the temperatureabnormality detector circuit TA and the power supply voltage abnormalitydetector circuit PA. Feedback of the error signals to the externalcontroller 6 based on the ground potential does not need an interfacecircuit including a particular insulating element. This increases thespeed of error signal transmission and the responsiveness to the variousabnormal conditions.

<Ninth Preferred Embodiment>

The power device controller according to the present invention describedin the first to eighth preferred embodiments is adapted to transmit andreceive the control signal or the feedback signal through the levelshift circuit employing the transistor having the high breakdown voltagecharacteristic (for example, the breakdown voltage of not less that 800V), eliminating the need for the particular insulating elements such asphotocouplers. Further, the use of the charge pump circuit as thecontrol power supply for the power devices eliminates the need for theindividual power supplies in the high and low potential portions butpermits the single power supply to operate the high and low potentialportions. It is accordingly unnecessary to provide an exteriorlyattached interface for the insulating elements and a large-sized powersupply devices, achieving the integrated power device controllerincluding the protective circuits without difficulty.

Description will now given on a drive controller for a three-phase motoraccording to a ninth preferred embodiment of the present inventiondesigned such that the integrated power device controller including theprotective devices, the power devices, and a control power supply areencapsulated in a single package (referred to as "IPMed" hereinafter).

FIG. 19 illustrates an IPMed three-phase motor drive controller IPM1.Referring to FIG. 19, an AC three-phase power supply APW serving as apower supply for an AC input three-phase motor M is connected to aconverter circuit CC1 between the lines P and N, and the respectivephase, of the AC input three-phase motor M are connected to invertercircuits I10, I20, I30 for controlling the phases, respectively.

The inverter circuit I10 includes the transistors Q1 and Q2 which arepower devices, such as IGBTs (insulated gate bipolar transistors),totem-pole connected between the lines P and N, a controller α, and thecontrol power supply PS. The inverter circuits I20 and I30 have αsimilar construction and the description thereof will be omitted herein.The controller a is similar in construction to the controller α8 of theeighth preferred embodiment described with reference to FIG. 16, and thedescription thereof in similar portions is omitted herein. Further, abrake circuit BK of the ninth preferred embodiment is also similar inconstruction to that of the conventional three-phase drive controllerdescribed with reference to FIG. 26, and the description thereof insimilar portions is omitted herein.

<Control Power Supply>

The construction of the control power supply PS will be described below.FIG. 20 is a circuit diagram of the control power supply PS. Referringto FIG. 20, a circuit including a resistance element R10 and voltageclamping Zener diodes Z₀, Z₁ which are connected in series in thisorder, and a circuit including a resistance element R20, a transistorQ10, and a capacitor C10 which are connected in series in this order areconnected in parallel between the main power supply lines P and N. Thegate electrode of the transistor Q10 is connected to a connection pointA adjacent the anode of the Zener diode Z₀.

The operation of the control power supply PS is discussed below. Thepotential between the connection point A and the line P is designated asVZ₀, and the potential between the connection point A and the line N isdesignated as VZ₁. A main power supply voltage obtained by convertingthe three-phase AC power supply is applied between the lines P and N.When the potential VZ₁ reaches a voltage sufficient to turn ON thetransistor Q10, current flows between the collector and emitter of thetransistor Q10 to charge the transistor Q10. The voltage across thecapacitor C10 is determined by the Zener diode Z1. To use the chargedcapacitor C10 as a power supply for the controller α, the power supplyline of the controller α is connected to a connection point B of thecapacitor C10 and the transistor Q10. The control power supply describedwith reference to FIG. 20 corresponds to the control power supply PS ofthe controller α8 of the eighth preferred embodiment described withreference to FIG. 16. The transistor Q10 is illustrated as an IGBT inFIG. 20, but may be an FET.

As above described, the three inverter circuits I10, I20, I30individually include the control power supply circuits for operating thecontroller α. It is unnecessary to provide the DC power supply DPWhaving the isolation transformer TR outside the device and to supplypower to the control circuit through a long path line from the DC powersupply DPW, which have been done in the conventional three-phase motordrive controller of FIG. 26. This provides for size reduction of thethree-phase motor drive controller and high-quality power supply withoutnoises on the lines.

<Packaging>

Description will be given on packaging of the IPMed three-phase motordrive controller which is an example of the devices known as "IPM", orthe module designed such that a power element such as a power transistorand a controller for drive controlling the power element areencapsulated in a single package. FIG. 21 is a plan view of the IPMedthree-phase motor drive controller IPM1 in a packaged form. Referring toFIG. 21, the three-phase motor drive controller including a controlportion and a power portion is formed on a package base BP serving as apackage substrate. The control portion includes one of the power devicecontrollers of the respective preferred embodiments described abovewhich has the integrated high potential portion as a high potential IC100 and the integrated low potential portion as a low potential IC 200.The control portion further includes a control power supply IC 300 forthe power device controller, control terminals TM1 for input and outputof the input signal and the feedback signal, and a charge pump circuit1100.

The power portion comprises a power device portion 400 includinginverter circuits each having a pair of transistor and diode; atemperature abnormality detector circuit 500 provided adjacent the powerdevice portion 400 and for detecting the temperatures of the powerdevice portion 400; a brake circuit transistor 600 and a brake circuitdiode 700 both forming a brake circuit for applying electrical brakes tothe three-phase motor; a main power supply transistor 900 and a mainpower supply diode 1000 for rectifying the three-phase AC power supplyto use the power supply as the main power supply for the power device;main circuit terminals TM2 for providing input from the three-phase ACpower supply and an inverter output to the three-phase motor; and anactive filter circuit 800 for improving the power rate of the invertercircuits.

FIG. 22 is a perspective view of the above described IPMed three-phasemotor drive controller IPM1 in the final form. Referring to FIG. 22, anupper package OP is formed to cover an upper portion of the device, andcontrol pins L1 and output pins L2 corresponding respectively to thecontrol terminals TM1 and the main circuit terminals TM2 are connectedto external equipments.

The correlation with the construction of the three-phase motor drivecontroller described with reference to FIG. 19 is discussed below. Thecontroller a of FIG. 19 corresponds to the high and low potential ICs100 and 200, the control power supply PS of FIG. 19 corresponds to thecontrol power supply IC 300, the transistors Q1, Q2 and diodes D1, D2 ofFIG. 19 correspond to the power device portion 400, the convertercircuit CC1 of FIG. 19 corresponds to the main power supply transistor900 and the main power supply diode 1000, and the transistor Q7 and thediode D7 of FIG. 19 correspond to the brake circuit transistor 600 andthe brake circuit diode 700, respectively.

<Another Packaging>

The IPMed three-phase motor drive controller in another packaged form isdescribed. FIG. 23 is plan and sectional views in perspectiveillustrating the packaging of an lPMed three-phase motor drivecontroller IPM2. Referring to FIG. 23, on a package base BP10 having aheat sink HP are provided an integrated control circuit 2100, anintegrated power device portion 2200, control terminals TM10, and maincircuit terminals TM20, with the top covered with an upper package OP10.The controller of FIG. 23 is not divided into the high and low potentialportions but is formed on the same IC substrate, thereby reduced insize.

FIG. 24 is a perspective view of the above described IPMed three-phasemotor drive controller IPM2 in the final form.

<Characteristic Function and Effect of Ninth Preferred Embodiment>

According to the three-phase motor drive controller of the ninthpreferred embodiment of the present invention, packaging of theintegrated power device controller a and control power supply PS, thebrake circuit BK and the active filter circuit 800 allows further sizereduction of the three-phase motor drive controller.

<Tenth Preferred Embodiment>

Referring to FIG. 25, a tenth preferred embodiment provides theapplication of the power device controller of the present invention toan AC input single-phase motor drive controller, which attaining similareffects. Two inverter circuits I10 and I20 are used since the phase issingle. Other constructions of the AC input single-phase motor drivecontroller are similar to those of the three-phase motor drivecontroller, and the description thereof will be omitted herein.

While the invention has been shown and described in detail, theforegoing description is in all aspects illustrative and notrestrictive. It is therefore understood that numerous modifications andvariations can be devised without departing from the scope of theinvention.

What is claimed is:
 1. A controller for controlling a power device inresponse to an input signal wherein said power device includes a seriesconnection of a first and second semiconductor device which areconnected between first and second main power supply potentials with theconduction of at least said first semiconductor device being controlledby a control signal and with a common node of said first and secondsemiconductor device providing an output and with said input signalbeing generated as a function of said second main power supplypotential, said controller comprising:first signal generating means forgenerating a first signal in response to said input signal; level shiftmeans for changing an output level of said first signal to a value whichis a function of said first main power supply potential in order toproduce a second signal; and a first control signal generator means forgenerating said control signal for said first semiconductor device inresponse to said second signal, wherein said level shift means includesat least one level shifting semiconductor element between said first andsecond main power supply potentials wherein said semiconductor elementis controlled by said first signal and said at least one level shiftingsemiconductor element exhibiting breakdown voltage characteristicswhereby a breakdown voltage has a value not less than a voltage in therange between a value of said first and a value of said second mainpower supply potential.
 2. The controller of claim 1, wherein said firstsignal generator means for generating said first signal includes pulsegenerator means for generating a pulse in response to a level transitionof said input signalsaid second signal is a shifted pulse obtained bylevel-shifting said pulse by said level shift means, and said controlsignal generator means includes latch means for latching said shiftedpulse to generate said control signal for said first semiconductordevice.
 3. The controller of claim 2,wherein said pulse generator meansgenerates first and second pulses in response to positive and negativelevel transitions of said input signal, respectively, with said firstand second pulses constituting said first signal, said level shift meansincludes first and second level shifting semiconductor elements providedbetween said first and second main power supply potentials and having abreakdown voltage characteristic which is not less than a voltagebetween said first and second main power supply potentials, said firstand second level shifting semiconductor elements level-shifting saidfirst and second pulses toward said first main power supply potential togenerate first and second shifted pulses, thereby to provide said secondsignal, and said latch means latches said second signal including saidfirst and second shifted pulses to use said second signal as saidcontrol signal for said first semiconductor device.
 4. The controller ofclaim 3, further comprisingfirst operation abnormality detector meansfor detecting an abnormal operation in said first semiconductor deviceto generate a first abnormality indication signal having a level basedon said first main power supply potential, said level shift meansfurther includes a third level shifting semiconductor element providedbetween said first and second main power supply potentials and having abreakdown voltage characteristic which is not less than a voltagebetween said first and second main power supply potentials, said thirdlevel shifting semiconductor element level-shifting said firstabnormality indication signal toward said second main power supplypotential to produce a second abnormality indication signal, and saidsecond abnormality indication signal is a feedback signal to a circuitfor generation of said input signal.
 5. The controller of claim4,wherein said first operation abnormality detector means includesabnormality indication signal pulse generator means for generating apulse in response to level transition of said first abnormalityindication signal to use said pulse as a pulse signal for said firstabnormality indication signal, said second abnormality indication signalis a shifted pulse obtained by level-shifting said pulse signal for saidfirst abnormality indication signal by said third level shiftingsemiconductor element, and said level shift means includes feedbacksignal latch means for latching said shifted pulse as said secondabnormality indication signal to generate said feedback signal to saidcircuit for generation of said input signal.
 6. The controller of claim5,wherein a first controllable semiconductor element included in saidfirst semiconductor circuit and said first and second level shiftingsemiconductor elements are of a first conductivity type, and said thirdlevel shifting semiconductor element is of a second conductivity type.7. The controller of claim 6,wherein said control signal for said firstcontrollable semiconductor element is a first control signal, saidsecond semiconductor device includes a second controllable semiconductorelement, controllable in response to a second control signal, and saidcontroller further comprisingsecond control signal generator means forgenerating said second control signal in response to said input signal.8. The controller of claim 7, further comprising:a current detectingresistor between an electrode of said second controllable semiconductorelement which outputs a main current and said second main power supplypotential for detecting and converting said main current flowing throughsaid second controllable semiconductor element into a voltage signalcorresponding to said main current; and analog signal output meansreceiving said voltage signal corresponding to said main current forfeeding back a value of said main current indicated by said voltagesignal to said second control signal generator means in the form of ananalog signal.
 9. The controller of claim 8,wherein said analog signaloutput means includes:delay signal generator means for causing saidsecond control signal to delay to generate a delay signal; a gateelement having an input and an output and receiving said voltage signalat said input for opening and closing a transmission path of saidvoltage signal from said input to said output in response to said delaysignal; and a capacitor between said output of said gate element andsaid second main power supply potential, and wherein said analog signalis provided at said output.
 10. The controller of claim 4, furthercomprising:second operation abnormality detector means for detecting anabnormal operation in said second semiconductor circuit to generate athird abnormality indication signal having a level based on said secondmain power supply potential; and abnormality indication signalidentifying means for identifying said second and third abnormalityindication signals to feed back a result of the identification to saidcircuit for generation of said input signal.
 11. The controller of claim7, further comprising:input interlock means for detecting timings ofgeneration of said first and second control signals to prevent saidfirst and second control signals from being outputted simultaneously.12. The controller of claim 7, further comprising:PWM signal generatormeans for generating first and second PWM signals in response to saidinput signal, said first and second control signals being generated inresponse to said first and second PWM signals, respectively.
 13. Thecontroller of claim 1,wherein said controller is integrated on a singleor a plurality of semiconductor substrates and is driven by a singleoperation power supply for feeding a voltage between said first andsecond main power supply potentials.
 14. A drive controller for a motor,comprising:a controller for controlling a power device in response to aninput signal wherein said power device includes a series connection of afirst and second semiconductor device which are connected between firstand second main power supply potentials with the conduction of at leastsaid first semiconductor device being controlled by a control signal andwith a common node of said first and second semiconductor deviceproviding an output and with said input signal being generated as afunction of said second main power supply potential, said controllercomprising: first signal generating means for generating a first signalin response to said input signal; level shift means for changing anoutput level of said first signal to a value which is a function of saidfirst main power supply potential in order to produce a second signal;and a first control signal generator means for generating said controlsignal for said first semiconductor device in response to said secondsignal, wherein said level shift means includes at least one levelshifting semiconductor element between said first and second main powersupply potentials wherein said semiconductor element is controlled bysaid first signal and said at least one level shifting semiconductorelement exhibiting breakdown voltage characteristics whereby a breakdownvoltage has a value not lesser than a voltage in the range between avalue of said first and a value of said second main power supplypotential; wherein said controller is integrated on a single or aplurality of semiconductor substrates and is driven by a singleoperation power supply for feeding a voltage between said first andsecond main power supply potentials; a brake circuit in parallel withsaid first and second semiconductor devices for applying an electricalbrake to said motor in response to a predetermined stop signal; and aconverter circuit for rectifying an AC power supply to provide saidfirst and second main power supply potentials, said first and secondsemiconductor devices, said controller, said brake circuit and saidconverter circuit being provided in the form of a module.
 15. The drivecontroller of claim 14,wherein said module includes an active filtercircuit for increasing a power rate of said drive controller.
 16. Thedrive controller of claim 14,wherein said module includes a power supplycircuit for supplying power for said controller from said AC powersupply.
 17. The drive controller of claim 16, further comprising:acharge pump circuit between said power supply circuit and a connectionpoint of said first and second semiconductor devices, said charge pumpcircuit including a first diode and a capacitor connected in series inorder from a positive output of said power supply circuit; and a seconddiode between said first diode and a control electrode of said firstcontrollable semiconductor element of said first semiconductor device,said second diode having a negative electrode connected to a negativeelectrode of said first diode.